ROHM Develops 5th Generation SiC MOSFETs with Approximately 30% Lower On-Resistance at High Temperatures
Source: The Manila times
Published on: 2026-04-21 17:03
ROHM Develops Latest Device of its EcoSiC™ Series: The 5th generation SiC MOSFETs optimized for high-efficiency power applications. Get the latest news delivered to your inbox Sign up for The Manila Times newsletters By signing up with an email address, I acknowledge that I have read and agree to the Terms of Service and Privacy Policy. Advertisement Reducing On-Resistance at High Temperatures Compared to Conventional 4th Generation Products Contributes to making units smaller while increasing output power in high temperature applications. Advertisement Santa Clara, CA and Kyoto, Japan, April 21, 2026 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced it has developed the latest device of its EcoSiC™ series: the 5th Generation SiC MOSFETs optimized for high‑efficiency power applications. This technology is ideally suitable for automotive electric powertrain systems - such ...
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